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Magnetic tunnel junctions (MTJs) have become a basic building block for various types of spintronics devices, such as magnetic random access memory (MRAM) cells, magnetic field sensors and microwave generators or detectors.
Spin-torque oscillators (STOs) have been proposed as candidates for magnetic field sensors with the possible advantages including high spatial resolution, energy efficiency and frequency resolution [1,2,3].
Magnetic Tunnel Junctions (MTJs) with Perpendicular Magnetic Anisotropy (PMA) have recently brought a significant attention in view of application as high-density non-volatile Magnetic Random Access Memory (MRAM) due to their possible low critical current density, good thermal stability and downscalable junction size [1]. As the PMA can be affected by the MTJ layer structure, these properties can...
For understanding physical mechanisms occurring in ferromagnetic nano-layers, micromagnetic simulations are commonly used. In order to perform an advanced analysis of complex magnetization dynamics induced by phenomena such as Spin-Transfer-Torque (STT) [1,2] or voltage-controlled anisotropy [3,4] changes, a spatial distribution of power spectral density is often needed [5]. We use a specially designed...
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