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There has been significant advancement in photonic infrared (IR) detector technology in the past decade. In this tutorial, I will cover the basics of photonic IR detectors including the detection mechanisms and figures of merit. I will end with a survey of a few current technologies. Infrared imaging (3–25μm) has been an important technological tool for the past 60 years since the first report of...
The reliable generation of high-quality single photons has long been a goal of research in photonic quantum information. Direct-UV-written (DUW) silica-on-silicon waveguides provide a reproducible, uniform, low-loss, and fiber-compatible platform for the integration of spontaneous four-wave mixing-based heralded single-photon sources [1]. To overcome limitations caused by Rayleigh scattering, which...
Integrated quantum optics provides great promise for enabling photonic experiments to reach new regimes of complexity. Chip-based fabrication enables sophisticated networks involving multiple interfering pathways in a compact and stable physical architecture. In a recent work [1] we demonstrated an advance in the complexity of these integrated devices by showing the first quantum interference of three...
The recent trend towards integration of quantum optics experiments has produced a demand for on-chip single photon detectors with high quantum efficiencies. In previous work we demonstrated integrated photon number resolving detectors for use at telecommunications wavelengths [1], here we outline developments of this design which have enabled improvements in the quantum efficiency, permitting an on-chip...
We demonstrate a high-efficiency, photon-number resolving transition edge sensor, integrated on an optical silica waveguide structure. The detector consists of three individual absorber/sensor devices providing a total system detection efficiency of up to 93% for single photons at a wavelength of 1551.9 nm. This new design enables high fidelity detection of quantum information processes in on-chip...
We demonstrate an integrated photon-number resolving detector, operating in the telecom band at 1550 nm, employing an evanescently coupled design that allows the detector to be placed at arbitrary locations within a planar optical circuit. Up to 5 photons are resolved in the guided optical mode via absorption from the evanescent field into a tungsten transition-edge sensor. The detection efficiency...
We present a direct UV-written integrated photonic circuit with on-chip phase control through a thermo-optic phase shifter. An arbitrary beam splitter and a two-photon N00N state are demonstrated with high visibility interference.
A ternary rare-earth oxide (REO) up-conversion layer was deposited on monocrystalline thin film solar cells to demonstrate up-conversion of sub-band-gap solar radiation into the spectral range of silicon. Laser radiation from 1520 nm to 1560 nm was shown to generate an additional photocurrent in the underlying silicon solar cell. Through combinations of rare-earth ions, portions of the sub-band-gap...
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