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A D-band low-noise amplifier with gain boosting is implemented in a 0.13 SiGe BiCMOS technology, occupying 0.4 mm of IC area. The circuit consists of two stages of cascode amplifiers with inductive common-base termination, which improves the gain by increasing the output impedance. The measurements show more than 20 dB gain from 110 to 140 GHz, consuming 12 mW of total dc power from...
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