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The electrical properties and spectral response of a Hamamatsu S5821 silicon PIN photodiode were investigated in-situ during and after irradiation by 430 keV H+, 2.15 MeV Li2+, 4 MeV O3+ and 6.5 MeV O4+ ion beams focused to a sub-micrometer beam size. Ion species and their respective energies were selected to approximately have the same end range of 5 mum within the depletion region of the unbiased...
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