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A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies fT of 240 GHz, maximum oscillation frequencies fmax of 330 GHz, and breakdown voltages BVCEO of 1.7 V along with high-voltage HBTs (fT = 50 GHz,fmax = 130 GHz, BVCEO = 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays...
We present a SiGe BiCMOS technology featuring high-speed HBTs with peak transit frequencies fT of 240 GHz and maximum oscillation frequencies fmax of 330 GHz at breakdown voltages of BVCEO=1.7 V. The high-speed HBTs are integrated in a 0.13 µm RF CMOS process along with high-voltage HBTs (fT=40 GHz, fmax=120 GHz, BVCEO=4.5 V) and a set of passive RF components. CML ring oscillator gate delays of 2...
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