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Local field potentials (LFPs) contain relevant information about neuronal population activity [1]. They are commonly measured in the brain to investigate information processing by neural circuits and for neuroprosthetics applications. We present a novel method allowing for in vivo ‘electrical imaging’ of LFPs. An oxide-insulated neural probe was implanted in the brain of a rat, establishing a capacitive...
In this paper, the authors investigate the impact of device interconnect parasitics on the two most commonly-accepted RF small-signal figures-of-merit, the transit frequency (fT) and the maximum frequency of oscillation (fmax) in state-of-the-art SiGe HBT technology. Simulations and measurement results are provided as a guideline to design an optimum device interconnect scheme to achieve a high fmax...
The integration of lattice mismatched semiconductors on Si(001) is of fundamental importance to further in-crease the performance and/or functionality of today's Si integrated circuits. The theory of compliant substrate effects offers the vision to integrate defect-free alternative semiconductor structures on Si. This concept is based on balancing the mismatch strain between the overgrowing epitaxial...
We present a SiGe BiCMOS technology featuring high-speed HBTs with peak transit frequencies fT of 240 GHz and maximum oscillation frequencies fmax of 330 GHz at breakdown voltages of BVCEO=1.7 V. The high-speed HBTs are integrated in a 0.13 µm RF CMOS process along with high-voltage HBTs (fT=40 GHz, fmax=120 GHz, BVCEO=4.5 V) and a set of passive RF components. CML ring oscillator gate delays of 2...
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