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A fully depleted strained-silicon-on-insulator (FD-sSOI) capacitorless one-transistor dynamic random access memory (IT-DRAM) cell with a strained channel was fabricated, and the electrical characteristics of transistor and DRAM were compared with that of a conventional FD-SOI capacitorless IT-DRAM cell. The fabricated FD-sSOI DRAM cell has excellent transistor electrical parameters, such as extremely...
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