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We report the lowest leakage achieved to date in sub-0.5 nm EOT MIM capacitors compatible with DRAM flows, showing for the first time a path enabling scalability to the 3X nm node. A novel stack engineering consisting of: 1) novel controlled ultrathin Ru oxidation process, 2) TiOx interface layer, is used for the first time to achieve record low Jg-EOT in MIM capacitors using ALD Sr-rich STO high-k...
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