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This paper presents infrared absorption (FTIR) measurements of SiN layers and correlates them to their ability to passivate silicon wafer surfaces. The best passivation was obtained for films having a nitrogen to silicon atomic composition in the proximity of N/Si=1.2, together with a high concentration of Si-N bonds (approximately 1times1023 cm-3) and a refractive index in the vicinity of n=2. The...
The minority carrier diffusion length as a function of carrier density has been extracted from the spectral response of the open-circuit voltage of silicon solar cells, which has been measured with the quasi-steady-state spectral photovoltage technique, QSSVoc -lambda. The method can determine a relative internal quantum efficiency for a broad range of voltages, and therefore, of carrier injection...
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