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We demonstrate that nearly stoichiometric amorphous silicon nitride (SiNx) can exhibit excellent surface passivation on both p- and n-type c-Si as well as low absorption at short wavelengths. The key process to obtain such a SiNx is the optimized deposition pressure. The effective carrier lifetimes of these samples exceed the commonly accepted intrinsic upper limit over a wide range of excess carrier...
We demonstrate that nearly stoichiometric amorphous silicon nitride (SiN ) can exhibit excellent surface passivation on both - and -type c-Si, as well as low absorption at short wavelengths. The key process to obtain such a SiN is the optimized deposition pressure. The effective carrier lifetimes of these samples exceed the commonly accepted intrinsic upper limit over a wide range of excess...
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