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Oscillatory tunneling magnetoresistance (TMR) as a function of the length of the n-GaAs channel is investigated theoretically for an Fe3O4/n-GaAs/Fe3O4 junction with a Schottky barrier between half metallic Fe3O4 and the n-GaAs semiconductor. In the n-GaAs channel, a tunneling current with ballistic and diffusive components is taken into account. The ballistic component results in oscillations of...
Spintronics strives to revolutionize conventional electronics by integrating magnetic materials with semiconductor devices, such as the spin field effect transistor (SFET)[1], which not only improve the capabilities of electronic devices, but develop new functionalities. For electrodes of spin injection and detection in SFET device, half metallic Fe3O4 is an attractive candidate because its high Curie...
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