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A novel device structure was fabricated with an inorganic SiO 2 layer inserted between hole-transporting and electron-transporting layer. In device indium-tin oxide (ITO)/poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylenevinylene](MEH-PPV)/tris-(8-hydroxyquinoline) aluminum (Alq 3 )/Al, the recombination zone lies in MEH-PPV layer, but in ITO/MEH-PPV/SiO 2 / Alq 3 ...
In this paper, the relationship between exciton recombination zone and applied voltage in organic light-emitting diodes (OLEDs) ITO/NPB (40nm)/Alq 3 (wnm)/rubrene(3nm)/Alq 3 (50−w)/Al, in which a 3nm rubrene as sensing layer is inserted in Alq 3 layer at different depth, is studied. By comparing the electroluminescence (EL) spectra of device driven under different applied voltages,...
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