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Scanning reflection electron microscopy is used to obtain plan-view atomic step images of buried SiO 2 /Si(111) interfaces and is combined with X-ray photoelectron spectroscopy. Under various oxidation conditions (with a < 0.9-nm oxide thickness), the results are consistent with the layer-by-layer oxidation model, where the oxidation is governed by random site oxidation and the subsequent...
Atomic hydrogen irradiated Si(111)-√3 √3-Ag surfaces, which involve nanometer size Ag clusters and hydrogen terminated regions, are studied by combined surface analysis with ultrahigh-vacuum scanning electron microscopy (UHV-SEM), scanning reflection electron microscopy (SREM), microprobe reflection high-energy electron diffraction (μ-RHEED) and Auger electron spectroscopy (AES). Electron beam...
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