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0.2 mu m Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As LMHEMT on InP with an undoped GaInAs layer to reduce gate leakage have been realised and their DC and RF properties have been investigated at cryogenic temperatures. The cutoff maximum frequencies of oscillation F/sub max/ up to 260 GHz are extrapolated at 50K from the maximum unilateral gain (MUG) determined using S-parameters measured...
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