The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate ridge waveguide lasers based on AlInGaAs multiple quantum wells emitting at 1434 and 1541 nm on the same laser bar using quantum-well intermixing with dielectric capping layers. The internal quantum efficiencies are measured to be 61% and 72% and the internal losses are 49 and 23 cm-1 for lasers with intermixing promoted and inhibited, respectively. The characteristic temperatures are...
A 1×2 multimode interference device is monolithically integrated to two electroabsorption modulator based switches at the output ports by means of quantum-well intermixing. At the wavelength range of 1550-1570nm, both arms act as separate DC switches which can be modulated with the extinction ratios of up to 10dB. Monolithic integration of active and passive photonic components is attractive due to...
This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied...
We have investigated the power threshold of discrete Kerr surface solitons at the interface between discrete and continuous 1D AlGaAs medium. Distinct thresholds were measured for interface solitons localized at different sites from the interface.
We observed, for the first time, the breakup of a wide high intensity beam due to modulational instability in the normal diffraction region of a discrete optical system and its absence in the anomalous regime
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.