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Plasma doping (PD) is a potential shallow junction technology for advanced integrated circuits manufacturing. Accurate simulation on PD is thus needed. The simulation on PD induced B concentration profile in Si is presented in this paper. A computational efficiency Molecular Dynamics (MD) method is applied. The plasma potential, the deviation of ion energy, and the injection angle are considered....
Using binomial distribution, we have created a structure to describe Si1-xGex substrate, so ion implantation into Ge and Si1-xGex can be simulated based on Molecular dynamics method. ZBL potential is applied to describe interaction between implanted ion and target atoms. David Cai's electronic stopping power model is applied to calculate collision between implanted ion and electronics. The results...
A molecular dynamic method for cluster implantation simulation which is a potential technology for shallow junction formation in integrated circuits manufacture, aimed at microelectronics application, is presented in this paper. Accurate geometric structures of boron clusters including H atoms are described by the model. A potential function taking a form of combining the ZBL and the SW potentials...
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