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Unique properties of the N‐acceptor in homo‐ and heteroepitaxially grown ZnO by molecular beam epitaxy (MBE) are studied by means of microproving of surface sheet‐resistance, Hall‐effect measurement, persistent photoconduction (PPC) and thermally stimulated current (TSC). Rapid postanneal of N‐doped ZnO is found to induce the change in the conduction type from n‐type (as‐grown) to p/n‐type mixed conduction,...
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