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We succeeded in the fabrication of a thick InGaN template by (11$ \bar 2 $2) facet growth and mass transport. Thick InGaN was grown on a GaN (11$ \bar 2 $2) facet with a stable facet structure. After 20 min annealing under a flow of NH3 and N2, the InGaN with the (11$ \bar 2 $2) facet was perfectly embedded owing to mass transport. Subsequently, a multiple‐quantum‐well structure was fabricated on...
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