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When high voltage direct current (HVDC) system is under the monopolar operation mode, huge direct current (DC) is injected into the earth through the DC grounding electrode, which will result in earth potential changes in a wide range of area. In this case, DC will be coupled into the nearby alternating current (AC) power grid and have some bad influences, called DC bias phenomenon, on the measuring...
Record-high drive current on the order of 3–5mA/μm is demonstrated in lateral silicon bipolar transistors on SOI. This is achieved by scaling quasi-neutral base width to below 10nm. The heavily doped collector enables the transistor to operate in high level injection regime without the detrimental base push-out effect. Measured cut-off frequency is the highest for a lateral bipolar and has a broad...
The electrical characteristics of a heterojunction tunneling field-effect transistor (HETT), with a p-type Si0.75Ge0.25 source, have been measured as a function of strain. HETTs with channel transport and applied strain both in the [110] direction show a smooth monotonic change in drain current over a range of 0.09% compressive to 0.13% tensile strain. A measure γ = (d/d ln JD)(d ln JD/ds) |s=0 of...
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