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The performance and efficiency droop behaviors of InGaN/GaN multiple quantum well (MQW) green LEDs with various low temperature grown GaN cap (LT-cap) layer are investigated. It is found that the output power increases when a thin LT-cap layer (0.37 nm) is inserted and it decreases as the LT-cap layer thickness increases up to 1.5 nm. In addition, the apparent efficiency droop decreases when the thickness...
Two different sets of structural parameters are used to fabricate InGaN/GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) which have nearly the same light emission wavelength. It is found that, compared with the thin-well but high-In-content MQW LED, the efficiency droop of InGaN LED with the thick-well but low-In-content MQWs is less significant. Such reduction of droop may be attributed...
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