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This paper investigates the advanced IGBT gate driving strategies which optimizes its switching behaviours and compares with the conventional driving method. The optimal IGBT performance not only relies on its advanced semiconductor design and fabrication techniques, but also the optimized local control and protection from intelligent gate drivers and global converter control strategy. An advanced...
This paper investigates the prediction of the second order dc voltage ripple in a modular multilevel converter (MMC) based point-to-point high-voltage direct-current (HVDC) system when the rectifier station suffers a single-line-to-ground (SLG) fault. Under this unbalanced condition, the second order dc voltage ripple will transfer to the healthy inverter station and can lead to a potential output...
Overcurrent protection of silicon carbide (SiC) MOSFETs remains a challenge due to lack of practical knowledge. This paper presents two overcurrent protection methods to improve the reliability and overall cost of the SiC MOSFET based converter. First, a solid state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the DC bus to detect...
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