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We investigated the surface of ordered InGaAs alloys lattice-matched with InP(0 0 1) substrates during and after growth using reflectance difference or reflectance anisotropy spectroscopy (RDS or RAS). Bulk atomic ordering was investigated by Raman spectroscopy and ex situ RDS measurements. We observed that a (2×3) surface during growth is a trigger for the bulk cation ordering in the InGaAs/InP(0...
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