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Despite 20years of research on Cu(In,Ga)Se2 (CIGSe) solar cells there is still no conclusive model to explain the electronic properties of the back contact between the CIGSe absorber and the molybdenum electrode. For this interface, Schottky-type as well as ohmic behavior has been reported previously. In particular, the intermediate MoSe2 layer which forms between the absorber and the metal during...
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