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Epitaxial GaSb(100) semiconductor films were prepared in an AIX200 reactor using triethylantimony and triethylgallium as precursors. MOVPE growth of (100) surfaces was investigated and monitored in situ with reflectance anisotropy/difference spectroscopy (RDS). RDS signals helped in improving the growth parameters, i.e. growth temperature, growth rate, and Sb/Ga ratio. Using unfavourable growth parameters...
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