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In this paper, we present results from room-temperature continuous-wave operation of 1.3-mum p-doped InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with high T0 of ~510 K and low threshold current density of ~65 A/cm2 per QD layer. The highest output power from the device is over 0.74 mW. The temperature characteristics of the devices are investigated. It is demonstrated...
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