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Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances and evaluated field emission characteristics using a single Cu emitter. The gap was systematically varied...
VO2 (A) emitters with 10 nm gap between the cathode and anode were fabricated with the aid of focus ion beam etching. Excellent field emission properties were achieved under atmospheric conditions with turn-on voltage as low as 0.6 V and good emission stability over 30 minutes. This work provides a practical way to eliminate the vacuum needs of the field emission devices and has potential use in future...
Field emission properties of SiC emitters with 14 nm gap between the cathode and anode are investigated here. With this nano gap, field emission can be turned on at 3V, which is much lower than that in previous works and comparable to that of CNT emitters. Its emission current follows the Fowler-Nordheim relationship and reaches up to 22.3nA at 5V. The influence of emitter width on field emission...
Field emission properties of single Cu emitter with nanometer scale cathode-anode distance are investigated here. Field emission was achieved below 5 volts under atmospheric conditions with 20 nm gap between the cathode and anode. The turn-on voltage is 2 V and the maximum current reaches to 32.5 nA at 5 V. With the help of focus ion beam etching, the cathode-anode distance was precisely controlled...
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