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Multi-scale modelling of the electron transport via a metal-semiconductor interface is carried out by coupling ab initio calculations (DFT) with three-dimensional finite element ensemble Monte Carlo simulations. The results for the Mo/GaAs (001) interface show that variations of the electronic properties with the distance from the interface have a strong impact on the transport characteristics. In...
We describe a meshing strategy which allows the placement of the nodes of the mesh in the positions of the atoms in the selected regions of the device. This meshing strategy is used to simulate a 15 nm gate length Implant Free In0.75Ga0.25As MOSFET with a 3D parallel drift-diffusion simulator. We illustrate the use of this mesh in a small study of the impact of random dopants positioned in the iquest-doping...
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