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In this paper we study the effect of the phonon scattering in Silicon nanowire transistors using a Non equilibrium Green Function Formalism. We consider a wide range of channel lengths from 6 to 40 nm in 2.2×2.2 nm2 cross section devices. We study the reduction in drain current due to scattering in these devices and extract the phonon-limited mobility. We also show the impact of the scattering in...
We study intrinsic parameter fluctuations caused by atomicity of matter in a 10 nm gate length MOSFET through the use of a 3D parallel drift-diffusion simulator. To carry out the study we have developed a meshing scheme which allows to take into account the actual positions of the dopants in the crystal lattice. We illustrate the impact of random positions of dopants on the threshold voltage and the...
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