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Epitaxial layers of 6H and 4H-SiC have been grown with high growth rate by sublimation epitaxy on SiC substrates with different surface orientation. Polytype disturbances, i.e. regions within the layer where the polytype differs from that of the underlying substrate, may be observed at domain boundaries, defects and along the edges of the samples. The formation of polytype disturbances is more pronounced...
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