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This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In 2 S 3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl ...
Indium sulfide (In2S3) films with three different thicknesses (150, 400 and 600 nm) were prepared using thermal evaporation at room temperature. As prepared samples were amorphous and subsequent annealing at higher temperature (>573 K) resulted in the formation of crystalline phase. Optical band gap was found in the range of 1.9–2.9 eV for as prepared samples and decreased with increase in annealing...
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