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Indium sulfide thin films prepared using spray pyrolysis, with In/S ratio 2/3 in the solution, were annealed in vacuum at 300 and 400°C. The effect of this treatment on properties of the films was studied using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, optical absorption, transmission and electrical measurements. Optical constants of the films were calculated...
High-quality ZnO epitaxial films without rotation domain structure were successfully prepared on sapphire (0001) substrates using metal organic chemical vapor deposition method. The ZnO films deposited by rf sputtering at the substrate temperature of 300 o C with (0001) preferred orientation were used as a very thin intermediate buffer layer with the thickness of 5-40nm. In the X-ray diffraction...
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