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The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO2/TiO2/HfO2/Pt and Pt/HfO2/TiO2/HfO2/TiN exhibit typical...
We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al 2 O 3 /HfO 2 /Al 2 O 3 -based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al 2 O 3 /HfO ...
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