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Semi-insulating GaAs was contaminated by Cu. For this purpose, a thin Cu layer (30nm) was deposited by evaporation. The diffusion and the homogeneous distribution of the Cu was performed during an annealing step at 1100 o C under defined As vapour pressures. The samples were quenched to room temperature. During a subsequent isochronal annealing experiment, vacancy clusters were found to be...
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