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This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different...
The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.
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