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In this work, we present and compare the results obtained from different Si-based melts (Ge–Si, Al–Si and Al–Ge–Si) for growing SiC layers on α-SiC substrate by vapour–liquid–solid (VLS) mechanism. It was found that, depending on melt composition, the deposit could be either a complete 3C or α-SiC layer or even a mixture of these polytypes. The binary Al–Si melt leads systematically to a highly p-type...
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