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This paper proposes a physics-based variability prediction model integrating the effects of plasma-induced damage (PID) in advanced LSIs. We focus on charging damage to high-k gate dielectrics and physical damage (Si recess by ion bombardment). In addition to gate length-variation which has been discussed so far as a dominant factor for (static) variability, we demonstrate how PID impacts on - increases...
Physical damages to Si substrate induced by energetic ions from plasma, associated with Si recess, is studied. By using molecular dynamics (MD) simulation, we clarified the structural picture of the damage. By spectroscopic ellipsometry (SE) measurements, we experimentally analyzed damaged layer thickness and energy band structure. Comprehensive analysis of the damage suggests device performance degradation...
Si recess structure formed by plasma-induced physical damage and its effects on the device performance were studied. The depth of Si recess region (dR) was determined from the experiments by using an inductively coupled plasma reactor with simple Ar gas mixtures. Threshold voltage shift (DeltaVth) of n-ch MOSFETs with the recess structure was modeled by using device simulation for various dR. The...
Performance degradation of n-MOSFETs with plasma-induced recess structure was investigated. The depth of Si recess (dR) was estimated from the experiments by using Ar gas plasmas. We propose an analytical model by assuming that the damage layer was formed during an offset spacer etch. A linear relationship between threshold voltage shift (DeltaVth) and dR was found. Device simulations were also performed...
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