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This paper proposes a physics-based variability prediction model integrating the effects of plasma-induced damage (PID) in advanced LSIs. We focus on charging damage to high-k gate dielectrics and physical damage (Si recess by ion bombardment). In addition to gate length-variation which has been discussed so far as a dominant factor for (static) variability, we demonstrate how PID impacts on - increases...
Physical damages to Si substrate induced by energetic ions from plasma, associated with Si recess, is studied. By using molecular dynamics (MD) simulation, we clarified the structural picture of the damage. By spectroscopic ellipsometry (SE) measurements, we experimentally analyzed damaged layer thickness and energy band structure. Comprehensive analysis of the damage suggests device performance degradation...
Si recess structure formed by plasma-induced physical damage and its effects on the device performance were studied. The depth of Si recess region (dR) was determined from the experiments by using an inductively coupled plasma reactor with simple Ar gas mixtures. Threshold voltage shift (DeltaVth) of n-ch MOSFETs with the recess structure was modeled by using device simulation for various dR. The...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
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