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Vertical transport with focus on resonant tunneling is studied on novel epitaxial GaAs/AlAs/ErAs/AlAs/GaAs heterostructures with an ErAs quantum well and AlAs double barriers. Current density (J)-voltage (V) characteristics are calculated taking into account the band parameters of ErAs. Experimentally, large negative differential resistance with excellent peak-to-valley ratios of 1.7-2.0 was observed...
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