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In this paper, (InxAl1–xN/AlN) MQWs/InN/GaN heterostructure with a (InxAl1–xN/AlN) MQWs barrier layer and an InN channel layer is presented. The numerical calculations of 2DEG characteristics are made using a self‐consistent solution of the Schrödinger and Poisson equations. The influence of (InxAl1–xN/AlN) MQWs and InN layer on band diagrams, 2DEG sheet density and carrier confinement are studied...
In this paper, AlGaN/GaN‐ and GaN/AlGaN/GaN‐based Schottky barrier diodes (SBDs) were fabricated and studied for comparison. The recorded electrical characteristics of the devices show that the introduction of a GaN cap layer can evidently reduce the reverse leakage current and suppress the forward current decay of the devices. What is more important, the GaN/AlGaN/GaN‐based SBDs are capable of greatly...
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