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(1120) GaN/InGaN multiple quantum wells (MQWs) were grown on (1102) sapphire by metal-organic vapor phase epitaxy. The excitation-intensity-dependent photoluminescence (PL) spectrum of these samples was measured, and no peak shift was observed. This phenomenon was attributed to the absence of piezoelectric field (PEF) along the growth orientation of the (1120) face MQWs. Our experimental results showed...
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