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AlN is epitaxially grown on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy (HT-HVPE) at constant growth rate and thickness, while varying the N/Al ratio in the gas phase at 1500°C. The influence of an additional low temperature (1200°C) protective layer on AlN crystal quality is also assessed. The experiments and thermodynamic calculations show that the sapphire substrate is unstable...
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