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The characteristics and losses of 10-kV SiC MOSFETs, p-IGBTs and emitter turn-off thyristors (ETOs) were compared using the experimental measurements, PSPICE simulations and numerical simulations. Using the extracted loss information and method of loss calculation in the AC/DC rectifier and DC/DC converter, the frequency capability of these 10-kV SiC power devices in a 20 kVA solid-state transformer...
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