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Micro-Raman spectroscopy was used to examine the changes in the structural and electrical properties of GaN films exposed to high-energy deuterium irradiation. The locations of the larger structurally damaged regions, at irradiation energy of 5MeV and 10MeV, were determined by monitoring the variations of the quasi-longitudinal optical phonon frequency. The empirical penetration depths after 5MeV...
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