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The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer...
In this report we present recent results for MOCVD growth of high indium content InGaN films on ZnO substrates. Growth was attempted on both bulk ZnO as well as ZnO epilayers grown on sapphire by MOCVD. ZnO is an attractive alternative substrate for III-Nitrides because of its superior lattice match: specifically ZnO is perfectly matched with In0.18Ga0.82N and low cost of substrates. Stable InGaN...
Phonon-assisted anti-Stokes fluorescence has been observed in GaN film grown on Si (111) substrate. The donor-acceptor pairs and bound excitons have played primary roles in the generation of anti-Stokes fluorescence.
Narrow bandgap (0.77 eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0 THz) with output power of 2.36 muW.
In this work, we present our new findings following our studies of the THz generation from InGaN/GaN multiple quantum wells (MQW's), pumped by a frequency-doubled sub-picosecond Ti:sapphire amplifier at the output wavelength of 395 nm. For the pump power of 320 mW, an average output power of 32 nW was measured in the frequency range of 300 GHz - 4.28 THz. Based on the photo luminescence (PL) spectra...
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