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Thin films of GaN, InGaN, AlGaN and AlN on Si(100) as well as on Al 2 O 3 (0001) single crystalline substrates have been deposited at 1123, 1023, 1173 and 1173K, respectively, by employing the simple inexpensive technique of nebulized spray pyrolysis. GaN films deposited on Si are polycrystalline where as the films deposited on Al 2 O 3 are epitaxial. GaN epitaxial...
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