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The Ge quantum dots on anodized nanometer porous silicon layers are prepared by area preferential nucleation at a low temperature of 720 o C. The porous silicon was formed by anodic conversion of p-type (100)-oriented crystalline silicon in hydrofluoric acid diluted by alcohol. Clear phonon-resolved PL, as a NP transition and its TA phonon replica, was observed from the Ge dots at the temperature...
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