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In this paper we will discuss the application of almost dislocation-free, high-pressure grown gallium nitride bulk crystals as a substrate for the epitaxy of GaN/InGaN/AlGaN laser diode structures. We show that these laser diodes may have very low dislocation densities (even down to 8×10 4 cm −2 ). These dislocations appear during the growth of the laser structure as a result of the...
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