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Through Silicon Via (TSV) plays a key role in accomplishing 3D IC integration. In most common approaches, TSV is filled with copper. Due to large mismatch in Coefficients of Thermal Expansion (CTE) between the copper via and the silicon of TSV, significant thermal stresses will be induced at the interfaces of Cu/dielectric layer (usually SiO2) and dielectric layer/Si, which would lead to various reliability...
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