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A 16-level cell is demonstrated using a test chip of nonvolatile oxide semiconductor RAM comprising c-axis aligned crystalline In-Ga-Zn oxide FETs. A read circuit composed of voltage followers outputs a read voltage with a maximum distribution of 37 mV. A single voltage follower has a maximum distribution of the read voltage of 25.3 mV. A 200 ns write time of the test chip is demonstrated.
As the number of devices connected to the Internet increases, servers and mobile devices must process increasingly large volumes of data, and also accommodate the increasing demand for high-speed and large-capacity working memory keeping the power consumption low. This need is being fulfilled by emerging devices, such as resistive RAM, phase-change RAM, and MRAM [1], which realize high-speed, high-density...
Using data retention circuits that include crystalline oxide semiconductor transistors as backup circuits for power gating, a processor system can reduce standby leakage current significantly. This is effective in the Internet of Things (IoT) applications that require standby power reduction. The crystalline oxide semiconductor transistor can constitute a nonvolatile data retention circuit easily...
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