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State-of-the-art power semiconductor industry uses figure-of-merits (FOMs) for technology-to-technology and/or device-to-device comparisons. However, the existing FOMs are fundamentally nonlinear due to the nonlinearities of the parameters such as the gate charge and the output charge versus different operating conditions. A systematic analysis of the optimization of these FOMs has not been previously...
Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure, which can be fabricated by using only two photomasks, is presented. The process damage of back-channel can be avoided and the gate-to-source/drain capacitance of an a-IGZO TFT is significantly reduced. As a result, the more fast and low cost TFT circuits can be achieved.
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